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Rubrene Crystal Field-effect Mobility Modulation via Conducting Channel Wrinkling

An article by M. A. Reyes-Martinez, A. J. Crosby, and  A. L. Briseno.

Marcos A. Reyes-Martinez from the Briseno and Crosby groups developed a device to apply local strains of different magnitudes along the conducting channel in “wrinkled transistors”. He discovered that conductivity changes are dictated by the net strain at the dielectric/semiconductor Interface and proposed a model based on the plate bending theory to quantify the net strain and predict the change in mobility. 


UMass News Office

June 1, 2015