An article by M. A. Reyes-Martinez, A. J. Crosby, and A. L. Briseno.
Marcos A. Reyes-Martinez from the Briseno and Crosby groups developed a device to apply local strains of different magnitudes along the conducting channel in “wrinkled transistors”. He discovered that conductivity changes are dictated by the net strain at the dielectric/semiconductor Interface and proposed a model based on the plate bending theory to quantify the net strain and predict the change in mobility.
